? semiconductor components industries, llc, 2007 march, 2007 ? rev. 5 1 publication order number: nta4153n/d nta4153n, nte4153n small signal mosfet 20 v, 915 ma, single n?channel with esd protection, sc?75 and sc?89 features ? low r ds(on) improving system efficiency ? low threshold voltage, 1.5 v rated ? esd protected gate ? pb?free packages are available applications ? load/power switches ? power supply converter circuits ? battery management ? portables like cell phones, pdas, digital cameras, pagers, etc. maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value units drain?to?source voltage v dss 20 v gate?to?source voltage v gs 6.0 v continuous drain current (note 1) stead y state t a = 25 c i d 915 ma t a = 85 c 660 power dissipation (note 1) steady state p d 300 mw pulsed drain current t p =10 s i dm 1.3 a operating junction and storage temperature t j , t stg ?55 to 150 c continuous source current (body diode) i s 280 ma lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c thermal resistance ratings parameter symbol value units junction?to?ambient ? steady state (note 1) sc?75 / sot?416 sc?89 r ja 416 400 c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). top view sc?75 / sot?416 case 463 style 5 2 1 http://onsemi.com sc?75, sc?89 drain gate 3 1 2 source 3 r ds(on) typ i d max v (br)dss 0.127 @ 4.5 v 20 v 0.170 @ 2.5 v 915 ma 0.242 @ 1.8 v 1 3 2 n?channel mosfet sc?89 case 463c 2 1 3 see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ordering information marking diagram & pin assignment xx m 3 drain 1 gate 2 source xx = device code m = date code* = pb?free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. 0.500 @ 1.5 v
nta4153n, nte4153n http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 26 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j 18.4 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 16 v 100 na gate?to?source leakage current i gss v ds = 0 v, v gs = 4.5 v 1.0 a on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.45 0.76 1.1 v negative threshold temperature coefficient v gs(th) /t j ?2.15 mv/ c drain?to?source on resistance r ds(on) v gs = 4.5 v, i d = 600 ma 127 230 m v gs = 2.5 v, i d = 500 ma 170 275 v gs = 1.8 v, i d = 350 ma 242 700 v gs = 1.5 v, i d = 40 ma 500 9500 forward transconductance g fs v ds = 10 v, i d = 400 ma 1.4 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 16 v 110 pf output capacitance c oss 16 reverse transfer capacitance c rss 12 total gate charge q g(tot) v gs = 4.5 v, v ds = 10 v, i d = 0.2 a 1.82 nc threshold gate charge q g(th) 0.2 gate?to?source charge q gs 0.3 gate?to?drain charge q gd 0.42 switching characteristics (note 3) turn?on delay time t d(on) v gs = 4.5 v, v dd = 10 v, i d = 0.2 a, r g = 10 3.7 ns rise time t r 4.4 turn?off delay time t d(off) 25 fall time t f 7.6 drain?source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 200 ma t j = 25 c 0.67 1.1 v t j = 125 c 0.54 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures. ordering information device marking (xx) package shipping ? nta4153nt1 tr sc?75 / sot?416 3000/tape & reel nta4153nt1g tr sc?75 / sot?416 (pb?free) 3000/tape & reel NTE4153NT1G tp sc?89 (pb?free) 3000/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
nta4153n, nte4153n http://onsemi.com 3 typical electrical characteristics 0 40 80 120 160 200 04812162 0 0 0.1 0.2 0.3 0.4 0 0.1 0.2 0.3 0.4 0.5 0.6 0 .7 i d, drain current (amps) r ds(on), drain?to?source resistance ( ) t j = 125 c v gs = 2.5 v t j = ?55 c t j = 25 c 0.6 0.8 1.0 1.2 1.4 1.6 ?50 ?25 0 25 50 75 100 125 150 0 0.1 0.2 0.3 0.4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 figure 1. on?region characteristics figure 2. transfer characteristics figure 3. on?resistance vs. drain current and temperature i d, drain current (amps) r ds(on), drain?to?source resistance ( ) t j = 125 c v gs = 4.5 v t j = ?55 c t j = 25 c figure 4. on?resistance vs. drain current and temperature figure 5. on?resistance variation with temperature t j , junction temperature ( c) i d = 0.35 a v gs = 4.5 v r ds(on), drain?to?source resistance (normalized) figure 6. capacitance variation drain?to?source voltage (volts) c, capacitance (pf) t j = 25 c v gs = 0 v c iss c oss c rss 2.0 v v gs = 2.6 v to 5.0 v v ds , drain?to?source voltage (volts) i d, drain current (amps) 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1.4 v 1.6 v 1.8 v 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.4 0.8 1.2 1.6 2 .0 v gs , gate?to?source voltage (volts) i d, drain current (amps) t j = ?55 c t j = 25 c v ds 10 v t j = 125 c
nta4153n, nte4153n http://onsemi.com 4 typical electrical characteristics v sd , source?to?drain voltage (volts) i s , source current (amps) v gs = 0 v 0 0.1 0.2 0.3 0.4 0.5 0.6 0 0.2 0.4 0.6 0.8 0 1.6 4 1 0 q g , total gate charge (nc) v gs, gate?to?source voltage (volts) 1.2 2 3 5 0.4 figure 7. gate?to?source voltage vs. total gate charge 0.8 q t i d = 0.2 a t a = 25 c 2.0 t j = 25 c t j = 125 c figure 8. diode forward voltage vs. current q gs q gd 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 0.001 0.01 0.1 1.0 r(t), normalized transient thermal resistance t, time (s) figure 9. normalized thermal response single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5
nta4153n, nte4153n http://onsemi.com 5 package dimensions sc?75/sot?416 case 463?01 issue f style 5: pin 1. gate 2. source 3. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. m 0.20 (0.008) d ?e? ?d? b e 3 pl 0.20 (0.008) e c l a a1 3 2 1 h e dim min nom max millimeters a 0.70 0.80 0.90 a1 0.00 0.05 0.10 b c 0.10 0.15 0.25 d 1.55 1.60 1.65 e e 1.00 bsc 0.027 0.031 0.035 0.000 0.002 0.004 0.004 0.006 0.010 0.059 0.063 0.067 0.04 bsc min nom max inches 0.15 0.20 0.30 0.006 0.008 0.012 h e l 0.10 0.15 0.20 1.50 1.60 1.70 0.004 0.006 0.008 0.061 0.063 0.065 0.70 0.80 0.90 0.027 0.031 0.035 0.787 0.031 0.508 0.020 1.000 0.039 mm inches scale 10:1 0.356 0.014 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 1.803 0.071
nta4153n, nte4153n http://onsemi.com 6 package dimensions sc?89 case 463c?03 issue c notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 463c?01 obsolete, new standard 463c?02. dim a min nom min nom inches 1.50 1.60 1.70 0.059 millimeters b 0.75 0.85 0.95 0.030 c 0.60 0.70 0.80 0.024 d 0.23 0.28 0.33 0.009 g 0.50 bsc h 0.53 ref j 0.10 0.15 0.20 0.004 k 0.30 0.40 0.50 0.012 l 1.10 ref m ??? ??? 10 ??? n ??? ??? 10 ??? s 1.50 1.60 1.70 0.059 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 bsc 0.021 ref 0.006 0.008 0.016 0.020 0.043 ref ??? 10 ??? 10 0.063 0.067 max max g m 0.08 (0.003) x d 3 pl j ?x? ?y? a b y 12 3 n 2 pl k c ?t? seating plane m s 1.10 0.043 0.53 0.020 1.00 0.039 mm inches scale 10:1 0.53 0.020 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5773?3850 nta4153n/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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